N+-GaSb/n(o)-GaInAsSb/P+-GaSb type II heterojunction photodiodes with low radiation damage


Ahmetoglu (Afrailov) M., Kirezli B., Kaynak G., Andreev I. A. , Kunitsyna E., Mikhailova M. P. , ...More

OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, vol.12, pp.517-520, 2018 (Journal Indexed in SCI) identifier

  • Publication Type: Article / Article
  • Volume: 12
  • Publication Date: 2018
  • Title of Journal : OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS
  • Page Numbers: pp.517-520

Abstract

The electrical characteristics of a double type II heterojunction in the GaSb/GalnAsSb/GaSb system with staggered band alignmentwere studied. The dark current mechanisms in the heterostructures were investigated at several temperatures. The experimental results shows that, the low temperature region the tunneling mechanism of the current flow dominates in both, forward and reverse biases. Have been investigated the radiation effect of Co-60 (gamma)-ray source with 6 MeV photon energy and 1.5x10(11) gamma/cm(2) fluency on the electrical and optical characteristics.