This study proposes a different technique known as the thermionic vacuum arc to produce a TiO2/Si heterojunction photodiode with better electrical properties than literature like the ideality factor indicating that the method is very suitable to form an outstanding quality heterojunction interface. The heterojunction is highly sensitive to different light intensities and has stable photocurrent characteristics as a photodiode. Structural and morphological properties of the produced TiO2/Si heterostructure surfaces were investigated via XRD and AFM, respectively. According to XRD analysis, it was observed that the TiO2 thin film was in a polycrystalline structure with the Anatase and Brookite phases. Also, the film surface is homogenous, and a low roughness value was measured as 3 nm. The thin film thickness and the bandgap values (E-g) were determined based on optical methods. The electrical parameters of TiO2 thin film, such as conductivity type, charge carrier density, and mobility, were also determined by Hall Effect Measurement. The Ag/TiO2/Si/Ag heterojunction device characteristics were determined by conducting the current-voltage (I-V) measurement. The ideality factor (n) and the barrier height (Phi (b)) values were determined as 1.7 and 0.65 eV, respectively. The photo-response performance was measured via transient photocurrent (I-T) measurements for different light intensities.