In this study, we have used a new single-step method for producing Cu2S thin films, which have good transparency in the visible range and high hole conductivity properties suitable for a wide range of optoelectronic device applications. Cu2S thin films are deposited by the Thermionic Vacuum Arc method, which is capable of very high deposition rates with high uniformity. The structural properties were determined by XRD analysis, and the morphological features were examined by AFM and SEM techniques. From XRD studies, the thin films were found to have a nano-crystalline form. The morphology images showed that the thin films have very low surface roughness. The bandgap of the film was calculated. The electrical properties of the films such as resistivity, majority carrier, and concentration were determined by Hall Effect measurements. In addition, the figure of merit value was calculated for p-type Cu2S transparent conducting thin films using the Haacke's formula.