Akademik Veri Yönetim Sistemi
6th International Eurasian Conference on Science, Engineering and Technology, Ankara, Türkiye, 25 - 27 Haziran 2025, ss.1306-1312, (Tam Metin Bildiri)
In this study, we present electrical characteristics of nickel silicide Schottly diodes. Firstly, a 100-nm thick nickel was deposited on p-type silicon <100> substrate. Then, the nickel silicide layer was grown on the substrate by annealing at 500 °C for 60 s. XRD measurements revealed that the tetragonal NiSi phase was dominantly formed. Ni/NiSi/p-Si and Ni/p-Si Schottky diodes were fabricated for the electrical characterization. Ni/p-Si Schottky device was used to compare the electrical properties. Ideality factors were obtained as 1.42 and 1.14 for the Ni/p-Si and Ni/NiSi/p-Si Schottky diodes, respectively. Effective barrier heights were calculated using Richardson plots and found to be as 0.41 eV for Ni/p-Si diode and 0.45 eV for nickel silicide Schottky device. The ideality factor of the silicide Schottky diode was increased slightly with temperature contrarily the typical diode behavior. This situation could be attributed to high conductivity of the NiSi layer. Due to the lower ideality factor values, the Schottky diodes exhibited an ideal diode properties.