Excess noise in silicon avalanche photodiodes

Kocak F., Tapan İ.

JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, sa.4, ss.810-813, 2007 (SCI-Expanded) identifier

  • Yayın Türü: Makale / Tam Makale
  • Basım Tarihi: 2007
  • Dergi Adı: JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.810-813
  • Anahtar Kelimeler: avalanche photodiodes, Monte Carlo simulation, gain, excess noise, WAVELENGTH DEPENDENCE, ABSORPTION
  • Bursa Uludağ Üniversitesi Adresli: Evet

Özet

The mean avalanche gain and the excess noise factor are important parameters characterizing the performance of an Avalanche Photodiode. These parameters vary with electric field strength and the position of the primary electron-hole pairs generated in the APD depletion layer. In the present paper, the mean avalanche gain and the excess noise properties have been investigated for the Hamamatsu S8148 APD structure for different distribution of photo-generated electron-hole pairs in the depletion region, Calculations were made with a Single Particle Monte Carlo simulation technique. Based on this work, the performance of the Hamamatsu S8148 APD as a photodetector for the PbWO4 scintillation light has been discussed.