The effects of package materials on the sensitivity of RadFET with HfO2 gate dielectric for electron and photon sources | AVESİS

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The effects of package materials on the sensitivity of RadFET with HfO2 gate dielectric for electron and photon sources

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KAHRAMAN A., KAYA Ş., AKTAĞ A., YILMAZ E.

25th Seminar on Activation Analysis and Gamma Spectroscopy (SAAGAS), Aachen, Germany, Aachen, Germany, 23 - 25 February 2015

Publication Type: Conference Paper / Summary Text
City: Aachen
Country: Germany
Bursa Uludag University Affiliated: Yes