Analysis of the Change in Peak Emission Wavelength with Dopant Ratio and Temperature Variation in Ga1-xAlxAs LEDs

Günday A., Taşcı İ.

ANKARA INTERNATIONAL CONGRESS ON SCIENTIFIC RESEARCH-IX (9. ULUSLARARASI ANKARA BİLİMSEL ARAŞTIRMALAR KONGRESİ), Ankara, Türkiye, 26 - 28 Aralık 2023, ss.1383-1384

  • Yayın Türü: Bildiri / Özet Bildiri
  • Basıldığı Şehir: Ankara
  • Basıldığı Ülke: Türkiye
  • Sayfa Sayıları: ss.1383-1384
  • Bursa Uludağ Üniversitesi Adresli: Evet

Özet

Light sources commonly used in the optical communication systems requiring bit rates lower than about 100 – 200 Mb/s are semiconductor light-emitting diodes (LEDs). In addition to being used for communication purposes, LEDs are also utilized in several electronic circuits. The semiconductor material used for an optical source's active layer must have a direct band gap. Therefore, semiconductor materials with direct band gap are used in LED production. LEDs used to operate in the 800 – 900 nm wavelength spectrum are generally ternary alloy Ga1-xAlxAs LEDs. The ratio of Aluminum Arsenide (AlAs) to Gallium Arsenide (GaAs), i.e. x, determines the band gap of the alloy and accordingly the peak emission wavelength of the LED.