Excess noise factor of neutron-irradiated silicon avalanche photodiodes
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, no.1-2, pp.146-151, 2005 (SCI-Expanded, Scopus)
- Publication Type: Article / Article
- Publication Date: 2005
- Doi Number: 10.1016/j.nima.2005.06.021
- Journal Name: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
- Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
- Page Numbers: pp.146-151
- Keywords: Monte Carlo simulation, radiation damage, avalanche photodiodes, excess noise, WAVELENGTH DEPENDENCE, RADIATION-DAMAGE, SIMULATION, GAAS, APD
- Bursa Uludag University Affiliated: Yes
Abstract
A Monte Carlo simulation code has been developed in order to analyse avalanche gain and excess noise factor variation of the well-defined silicon avalanche photodiode (APD) geometry as a function of the neutron fluences up to 2 x 10(13) neutrons/cm(2). The results show that the neutron fluence has an influence on the excess noise factor for the same mean avalanche gain for the PbWO4 light. (c) 2005 Elsevier B.V. All rights reserved.