Excess noise factor of neutron-irradiated silicon avalanche photodiodes


Pilicer E., Kocak F. , Tapan I.

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, vol.552, pp.146-151, 2005 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 552
  • Publication Date: 2005
  • Doi Number: 10.1016/j.nima.2005.06.021
  • Title of Journal : NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
  • Page Numbers: pp.146-151

Abstract

A Monte Carlo simulation code has been developed in order to analyse avalanche gain and excess noise factor variation of the well-defined silicon avalanche photodiode (APD) geometry as a function of the neutron fluences up to 2 x 10(13) neutrons/cm(2). The results show that the neutron fluence has an influence on the excess noise factor for the same mean avalanche gain for the PbWO4 light. (c) 2005 Elsevier B.V. All rights reserved.