Excess noise factor of neutron-irradiated silicon avalanche photodiodes
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, sa.1-2, ss.146-151, 2005 (SCI-Expanded, Scopus)
- Yayın Türü: Makale / Tam Makale
- Basım Tarihi: 2005
- Doi Numarası: 10.1016/j.nima.2005.06.021
- Dergi Adı: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
- Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
- Sayfa Sayıları: ss.146-151
- Anahtar Kelimeler: Monte Carlo simulation, radiation damage, avalanche photodiodes, excess noise, WAVELENGTH DEPENDENCE, RADIATION-DAMAGE, SIMULATION, GAAS, APD
- Bursa Uludağ Üniversitesi Adresli: Evet
Özet
A Monte Carlo simulation code has been developed in order to analyse avalanche gain and excess noise factor variation of the well-defined silicon avalanche photodiode (APD) geometry as a function of the neutron fluences up to 2 x 10(13) neutrons/cm(2). The results show that the neutron fluence has an influence on the excess noise factor for the same mean avalanche gain for the PbWO4 light. (c) 2005 Elsevier B.V. All rights reserved.