Investigation of parameters of new MAPD-3NM silicon photomultipliers

Ahmadov F., Ahmadov G., Akbarov R., Aktag A., Budak E., Doganci E., ...More

JOURNAL OF INSTRUMENTATION, vol.17, no.1, 2022 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 17 Issue: 1
  • Publication Date: 2022
  • Doi Number: 10.1088/1748-0221/17/01/c01001
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Compendex, Index Islamicus, INSPEC
  • Keywords: Gamma detectors, Photon detectors for UV, visible and IR photons (solid-state) (PIN diodes, APDs, Si-PMTs, G-APDs, CCDs, EBCCDs, EMCCDs, CMOS imagers, etc.), Spectrometers, Photon detectors for UV, visible and IR photons (gas) (gas-photocathodes, solid-photocathodes)
  • Bursa Uludag University Affiliated: Yes


In the presented work, the parameters of a new MAPD-3NM-II photodiode with buried pixel structure manufactured in cooperation with Zecotek Company are investigated. The photon detection efficiency, gain, capacitance and gamma-ray detection performance of photodiodes are studied. The SPECTRIG MAPD is used to measure the parameters of the MAPD-3NM-II and scintillation detector based on it. The obtained results show that the newly developed MAPD3NM-II photodiode outperforms its counterparts in most parameters and it can be successfully applied in space application, medicine, high-energy physics and security.