Akademik Veri Yönetim Sistemi
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, cilt.31, sa.5, ss.4287-4293, 2020 (SCI-Expanded)
The main concern of the present study is to improve the performance of Au/Alq3/n-Si diode with the help of a high-energy electron beam (e-Beam) irradiation. Before the production of Au/Alq3/n-Si, the structural analysis was carried out by X-Ray diffraction (XRD) to ensure that the radiation-induced structural deformation does not occur on the Alq3 powders. After vacuum deposition of Alq3 thin films, Fourier transfrom infrared (FTIR) measurements were also carried out. The current-voltage characteristics of Au/Alq3/n-Si diodes with Alq3 interfacial layer unirradiated (D1-pristine) and irradiated with 30 kGy (D2) and 100 kGy (D3) were discussed in detail. To analyze the effect of ionizing radiation on the produced diodes, we calculated the barrier height (phi(Bo)), ideality factor (n), shunt resistance (R-sh), and series resistance (R-s) by using these experimental data. It was observed that the electrical characteristics of Au/Alq3/n-Si diodes, for D1, D2, and D3, were highly influenced by the irradiation, and the device performance could be improved with the appropriate irradiation dose. Moreover, we achieved the series resistance tuning of Au/Alq3/n-Si diodes by irradiating Alq3 powders with high-energy e-Beam without intentional chemical doping of organic interfacial layer as a novel. This study has the potential to be a helpful guide for researchers who design and perform analysis of such devices.