Electrical, structural and morphological properties of Ni/n-Si contacts

Ozer M., Akay S. K., Peksoz A., Erturk K., Kaynak G.

OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, cilt.3, sa.5, ss.506-508, 2009 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 3 Sayı: 5
  • Basım Tarihi: 2009
  • Dergi Adı: OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.506-508
  • Anahtar Kelimeler: Electro-deposition, Schottky barrier height, Scanning electron microscopy, Morphological properties, HYDROGEN
  • Bursa Uludağ Üniversitesi Adresli: Evet

Özet

This paper presents structural, morphological and electrical properties of Ni/n-Si contacts formed by electro-deposition technique. Ni film is deposited on n-type Si (100) substrate using 2 mol/L Nickel Sulphamate, 0.5 mol/L Boric Acid solutions. The morphological properties are investigated by using energy dispersive X-Ray analysis and scanning electron microscopy imaging to perform local distribution of Ni. Electrical measurements have been done at room temperature to investigate the Schottky barrier height.