Electrical, structural and morphological properties of Ni/n-Si contacts


Ozer M. , AKAY S. K. , Peksoz A. , Erturk K., Kaynak G.

OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, vol.3, no.5, pp.506-508, 2009 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 3 Issue: 5
  • Publication Date: 2009
  • Title of Journal : OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS
  • Page Numbers: pp.506-508
  • Keywords: Electro-deposition, Schottky barrier height, Scanning electron microscopy, Morphological properties, HYDROGEN

Abstract

This paper presents structural, morphological and electrical properties of Ni/n-Si contacts formed by electro-deposition technique. Ni film is deposited on n-type Si (100) substrate using 2 mol/L Nickel Sulphamate, 0.5 mol/L Boric Acid solutions. The morphological properties are investigated by using energy dispersive X-Ray analysis and scanning electron microscopy imaging to perform local distribution of Ni. Electrical measurements have been done at room temperature to investigate the Schottky barrier height.