High-Speed Ultraviolet Photodetector Based on p-GaN Gate HEMT for Flame Monitoring

Yilmaz E., Wang H., Doganci E., Feng M., Sun Q., Mutale A., ...Daha Fazla

IEEE Transactions on Electron Devices, 2025 (SCI-Expanded) identifier

  • Yayın Türü: Makale / Tam Makale
  • Basım Tarihi: 2025
  • Doi Numarası: 10.1109/ted.2025.3539636
  • Dergi Adı: IEEE Transactions on Electron Devices
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Aerospace Database, Applied Science & Technology Source, Business Source Elite, Business Source Premier, Communication Abstracts, Compendex, Computer & Applied Sciences, INSPEC, Metadex, Civil Engineering Abstracts
  • Anahtar Kelimeler: 2-D electron gas (2DEG), GaN, high electron mobility transistor (HEMT), persistent photoconductivity (PPC) effect, phototransistor fabrication, ultraviolet detector
  • Bursa Uludağ Üniversitesi Adresli: Evet

Özet

The p-GaN gate high electron mobility transistor (HEMT) with a 2.0 × 10-5 cm2 sensitive area as a UV photodetector (PD) has been designed and fabricated in this study. AlGaN/gallium nitride (GaN) heterostructure was adopted to get a 2-D electron gas (2DEG) as a conductive channel, resulting in a high photoresponsivity of 8.07 × 104 A/W, a sharp cutoff wavelength at 360 nm, high UV-to-visible rejection ratio of 1.80 × 106, rise and decay time of 0.12 and 1.0 ms, respectively. The dark current of 5.44 × 10-7 A, the photocurrent of 4.42 × 10-3 A at 5 V, the external quantum efficiency (EQE) of 2.77% × 105%, and the detectivity of 8.31 × 1014 Jones for the UV PD were determined under a low UV light intensity of 5 mW/cm2 at 360-nm UV illumination. The obtained results show that the performance of as-fabricated UV PD based on AlGaN/GaN HEMT is significantly improved compared to the literature. This device, which has lower noise equivalent power (NEP) and enhanced detectivity features compared to existing ones, is a promising candidate for military and space applications.