Distributed contact flip chip InGaN/GaN blue LED; comparison with conventional LEDs

Genc M., Sheremet V., Elci M., Kasapoglu A. E., Altuntas I., Demir I., ...Daha Fazla

SUPERLATTICES AND MICROSTRUCTURES, cilt.128, ss.9-13, 2019 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 128
  • Basım Tarihi: 2019
  • Doi Numarası: 10.1016/j.spmi.2019.01.008
  • Dergi Adı: SUPERLATTICES AND MICROSTRUCTURES
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.9-13
  • Bursa Uludağ Üniversitesi Adresli: Evet

Özet

This paper presents high performance, GaN/InGaN-based light emitting diodes (LEDs) in three different device configurations, namely Top Emitting (TE) LED, conventional Flip Chip (FC) and Distributed Contact (DC) FC. Series resistances as low as 1.1 Omega have been obtained from FC device configurations with a back reflecting ohmic contact of Ni/Au/RTA/Ni/Ag metal stack. A small shift has been observed between electroluminescence (EL) emissions of TE LED and the FC LEDs. In addition, FWHM value of the EL emission of DCFC LED has shown the minimum value of 160 meV (26.9 nm). Furthermore, DCFC LED configuration has shown the highest quantum efficiency and power output, with 330 mW at 500 mA current injection, compared to that of traditional wire bonded TE LEDs and the conventional FC LEDs.