High-energy e-Beam-induced effects in Au/n-Si diodes with pre-irradiated PTCDA interfacial layer

AYDEMİR U.

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, cilt.31, sa.7, ss.5779-5788, 2020 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 31 Sayı: 7
  • Basım Tarihi: 2020
  • Doi Numarası: 10.1007/s10854-020-03148-6
  • Dergi Adı: JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Aerospace Database, Applied Science & Technology Source, Chemical Abstracts Core, Communication Abstracts, Compendex, Computer & Applied Sciences, INSPEC, Metadex, Civil Engineering Abstracts
  • Sayfa Sayıları: ss.5779-5788
  • Bursa Uludağ Üniversitesi Adresli: Hayır

Özet

In the presented study, the performance improvement of Au/PTCDA/n-Si diodes was demonstrated with the help of pre-irradiation of PTCDA powders. The crystallographic analysis was carried out by X-ray diffraction method after the pre-irradiation of PTCDA powders. After the vacuum deposition of pre-irradiated (PI) and unirradiated (UI) PTCDA thin films, the Au/PTCDA/n-Si diodes were fabricated. The I-V, C-V, and G/omega-V characteristics were analyzed for Au/PTCDA/n-Si diodes with UI PTCDA as an interfacial layer (D1-pristine) and PI PTCDA with 30 kGy as an interfacial layer (D2). Radiation-induced effects on the produced diodes were investigated with parameters of the barrier height (phi(Bo)), series resistance (R-s), and the density of interface states (N-SS) and compared to the parameters of the pristine diode. It was observed that the electrical characteristics of Au/PTCDA/n-Si diodes, for D1 and D2, were highly influenced by the irradiation. Thus, the device performance could be improved with the pre-irradiation process. By modifying the HF-LF capacitance method to the UI-PI capacitance method, we successfully calculated the radiation-induced N-SS values without using C-V measurement at two different frequencies.