Frequency dependent gamma-ray irradiation response of Sm2O3 MOS capacitors


Kaya S., Yilmaz E., Kahraman A., Karacali H.

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, vol.358, pp.188-193, 2015 (Peer-Reviewed Journal) identifier identifier

  • Publication Type: Article / Article
  • Volume: 358
  • Publication Date: 2015
  • Doi Number: 10.1016/j.nimb.2015.06.037
  • Journal Name: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
  • Journal Indexes: Science Citation Index Expanded, Scopus
  • Page Numbers: pp.188-193
  • Keywords: Sm2O3 MOS capacitors, Irradiation effects, Interface states, Oxide trapped charges, INTERFACE-TRAP DENSITY, ELECTRICAL CHARACTERISTICS, SERIES RESISTANCE, THIN-FILMS, SUBSTRATE, OXIDES, DIELECTRICS, STATES, LAYER

Abstract

The frequency dependent irradiation influences on Sm2O3 MOS capacitors have been investigated and possible use of Sm2O3 in MOS-based radiation sensor was discussed in this study. To examine their gamma irradiation response over a range of doses, the fabricated MOS capacitors were irradiated up to 30 grays. Capacitance-Voltage (C-V) measurements were recorded for various doses and the influences of irradiation were determined from the mid-gap and flat-band voltage shifts. In addition, the degradations of irradiation have been studied by impedance based leakage current-voltage (J-V) characteristics. The results demonstrate that J-V characteristics have not been significantly change by irradiation and implying that the excited traps have a minor effect on current for given dose ranges. However, the frequency of applied voltage during. the C-V measurements affects the irradiation response of devices, significantly. The variations on the electrical characteristics may be attributed to the different time dependency of acceptor and donor-like interface states. In spite of the variations on the device characteristics, low frequency measurements indicate that Sm2O3 is a potential candidate to be used as a dielectric layer in MOS based irradiation sensors. (C) 2015 Elsevier B.V. All rights reserved.