The SPICE Modeling of a Radiation Sensor Based on a MOSFET with a Dielectric HfO2/SiO2 Double-Layer

Marjanović M., Ilić S. D., Veljković S., Mitrović N., Gurer U., Yilmaz O., ...Daha Fazla

Sensors, cilt.25, sa.2, 2025 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 25 Sayı: 2
  • Basım Tarihi: 2025
  • Doi Numarası: 10.3390/s25020546
  • Dergi Adı: Sensors
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Aerospace Database, Aqualine, Aquatic Science & Fisheries Abstracts (ASFA), Biotechnology Research Abstracts, CAB Abstracts, Communication Abstracts, Compendex, INSPEC, MEDLINE, Metadex, Veterinary Science Database, Directory of Open Access Journals, Civil Engineering Abstracts
  • Anahtar Kelimeler: electrical simulation, high-k materials, RADFET, radiation sensor, SPICE model
  • Bursa Uludağ Üniversitesi Adresli: Evet

Özet

We report on a procedure for extracting the SPICE model parameters of a RADFET sensor with a dielectric HfO2/SiO2 double-layer. RADFETs, traditionally fabricated as PMOS transistors with SiO2, are enhanced by incorporating high-k dielectric materials such as HfO2 to reduce oxide thickness in modern radiation sensors. The fabrication steps of the sensor are outlined, and model parameters, including the threshold voltage and transconductance, are extracted based on experimental data. Experimental setups for measuring electrical characteristics and irradiation are described, and a method for determining model parameters dependent on the accumulated dose is provided. A SPICE model card is proposed, including parameters for two dielectric thicknesses: (30/10) nm and (40/5) nm. The sensitivities of the sensors are 1.685 mV/Gy and 0.78 mV/Gy, respectively. The model is calibrated for doses up to 20 Gy, and good agreement between experimental and simulation results validates the proposed model.