Magnetoresistance behaviour in CoFe/Cu multilayers: thin Cu layer effect

Tekgul A., ALPER M. , KÖÇKAR H.

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, vol.27, no.10, pp.10059-10064, 2016 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 27 Issue: 10
  • Publication Date: 2016
  • Doi Number: 10.1007/s10854-016-5078-0
  • Page Numbers: pp.10059-10064


The magnetoresistance properties of the CoFe/Cu multilayers have been investigated as a function of thin non-magnetic Cu layer thickness (from 2.5 to 0.3 nm). CoFe/Cu multilayers were electrodeposited on Ti substrates from a single electrolyte containing their metal ions under potentiostatic control. The structural analysis of the films was made using X-ray diffraction. The peaks appeared at 2 theta ae 44A degrees, 51A degrees, 74A degrees and 90A degrees are the main Bragg peaks of the multilayers, arising from the (111), (200), (220) and (311) planes of the face-centered cubic structure, respectively. The magnetic characterization was performed by using vibration sample magnetometer in magnetic fields up to +/- 1600 kA/m. At 0.6, 1.2 and 2.0 nm Cu layer thicknesses, the high saturation magnetization values were observed due to antiferromagnetic coupling of adjacent magnetic layers. Magnetoresistance measurements were carried out using the Van der Pauw method in magnetic fields up to +/- 1000 kA/m at room temperature. All multilayers exhibited giant magnetoresistance (GMR), and the similar trend in GMR values and GMR field sensitivity was observed depending on the Cu layer thickness.