Structural, optical and electrical properties of Al/SnO2/p-Si MIS diodes


Taysioglu A. A. , Erturk K., Bektore Y., HACIİSMAİLOĞLU M. C.

6th International Conference of the Balkan-Physical-Union, İstanbul, Turkey, 22 - 26 August 2006, vol.899, pp.586 identifier identifier

  • Publication Type: Conference Paper / Full Text
  • Volume: 899
  • Doi Number: 10.1063/1.2733327
  • City: İstanbul
  • Country: Turkey
  • Page Numbers: pp.586

Abstract

The absorption-wavelength, basis absorption spectrum and the Current- Voltage (I-V) characteristics of Al / SnO2 / p-Si (MIS) Schottky Diodes prepared by means of spray Pyrolysis method have been measured at 300 K. To possess information about the optical properties of Al / SnO2 / p-Si (MIS) Schottky diode optical absorptions, optical transmittance, band-gap and Urbach Parameter were investigated. The diode structures were studied by X-Ray diffraction. X-Ray diffraction studies showed that the crystallite size and prefential growth directions of diode.