Structural, optical and electrical properties of Al/SnO2/p-Si MIS diodes

Taysioglu A. A., Erturk K., Bektore Y., HACIİSMAİLOĞLU M. C.

6th International Conference of the Balkan-Physical-Union, İstanbul, Türkiye, 22 - 26 Ağustos 2006, cilt.899, ss.586 identifier identifier

  • Yayın Türü: Bildiri / Tam Metin Bildiri
  • Cilt numarası: 899
  • Doi Numarası: 10.1063/1.2733327
  • Basıldığı Şehir: İstanbul
  • Basıldığı Ülke: Türkiye
  • Sayfa Sayıları: ss.586
  • Bursa Uludağ Üniversitesi Adresli: Evet

Özet

The absorption-wavelength, basis absorption spectrum and the Current- Voltage (I-V) characteristics of Al / SnO2 / p-Si (MIS) Schottky Diodes prepared by means of spray Pyrolysis method have been measured at 300 K. To possess information about the optical properties of Al / SnO2 / p-Si (MIS) Schottky diode optical absorptions, optical transmittance, band-gap and Urbach Parameter were investigated. The diode structures were studied by X-Ray diffraction. X-Ray diffraction studies showed that the crystallite size and prefential growth directions of diode.