Investigation of thermal annealing effects on MoO3 thin film by atomic layer deposition

Demirtaş M.

Optical and Quantum Electronics, vol.53, no.2, 2021 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 53 Issue: 2
  • Publication Date: 2021
  • Doi Number: 10.1007/s11082-020-02717-7
  • Journal Name: Optical and Quantum Electronics
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Aerospace Database, Communication Abstracts, Compendex, INSPEC, Metadex, Civil Engineering Abstracts
  • Keywords: Transition metal oxide, Plasma enhanced atomic layer deposition, Raman spectroscopy, Spectroscopic ellipsometry, Atomic force microscopy
  • Bursa Uludag University Affiliated: No

Abstract

© 2021, The Author(s), under exclusive licence to Springer Science+Business Media, LLC part of Springer Nature.Molybdenum oxide (MoO3) thin films have been obtained by plasma-enhanced atomic layer deposition using precursors of Mo(CO)6 and O2 plasma at a reactor temperature of 160 °C. The MoO3 thin films deposited on p-type silicon substrates with thermally grown 300 nm thick SiO2 layer with different numbers of ALD growth cycles. Spectroscopic ellipsometer is used to characterize as-grown film thickness and refractive index. The as-grown films are treated at annealing temperatures at 300–600 °C. The structural properties of as-grown and annealed thin films have been characterized by optical microscopy, µRaman spectra, and atomic force microscopy.