Investigation of thermal annealing effects on MoO3 thin film by atomic layer deposition

Demirtaş M.

Optical and Quantum Electronics, cilt.53, sa.2, 2021 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 53 Sayı: 2
  • Basım Tarihi: 2021
  • Doi Numarası: 10.1007/s11082-020-02717-7
  • Dergi Adı: Optical and Quantum Electronics
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Aerospace Database, Communication Abstracts, Compendex, INSPEC, Metadex, Civil Engineering Abstracts
  • Anahtar Kelimeler: Transition metal oxide, Plasma enhanced atomic layer deposition, Raman spectroscopy, Spectroscopic ellipsometry, Atomic force microscopy
  • Bursa Uludağ Üniversitesi Adresli: Hayır

Özet

© 2021, The Author(s), under exclusive licence to Springer Science+Business Media, LLC part of Springer Nature.Molybdenum oxide (MoO3) thin films have been obtained by plasma-enhanced atomic layer deposition using precursors of Mo(CO)6 and O2 plasma at a reactor temperature of 160 °C. The MoO3 thin films deposited on p-type silicon substrates with thermally grown 300 nm thick SiO2 layer with different numbers of ALD growth cycles. Spectroscopic ellipsometer is used to characterize as-grown film thickness and refractive index. The as-grown films are treated at annealing temperatures at 300–600 °C. The structural properties of as-grown and annealed thin films have been characterized by optical microscopy, µRaman spectra, and atomic force microscopy.