Photoelectrical properties of fabricated ZnS/Si heterojunction device using thermionic vacuum arc method

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Kaplan H. K., Akay S. K., Ahmetoglu M.

SUPERLATTICES AND MICROSTRUCTURES, cilt.120, ss.402-409, 2018 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 120
  • Basım Tarihi: 2018
  • Doi Numarası: 10.1016/j.spmi.2018.05.055
  • Dergi Adı: SUPERLATTICES AND MICROSTRUCTURES
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.402-409
  • Anahtar Kelimeler: ZnS/Si, Heterojunction, Photoelectrical, Photoluminescence, TVA, THIN-FILMS, OPTICAL-PROPERTIES, SILICON, SI, DEPOSITION, PHOTOLUMINESCENCE, REFLECTIVITY, THICKNESS, DIODE, GAAS
  • Bursa Uludağ Üniversitesi Adresli: Evet

Özet

ZnS thin films have been successfully deposited with the same production parameters using thermionic vacuum arc technique on glass and silicon substrates. UV-Vis absorbance spectra and photoluminescence measurements were performed for the optical characterization of ZnS/glass thin film and ZnS/p-Si heterojunction device, respectively. The optical band gap is found approximately 3.78 eV. Further, electrical parameters of the device were determined for the current-voltage (I-V) measurements in dark and under illumination conditions. The open-circuit voltage and the short-circuit current values have been obtained related to illumination I-V measurements. Also, we have utilized photocurrent measurements to investigate the wavelength dependent to photosensitivity of the ZnS/p-Si heterojunction device.