N+-GaSb / no-GaInAsSb / P+-GaSb type ii heterojunction photodiodes with low radiation damage

Ahmetoglu Afrailov M., Kirezli B., Kaynak G., Andreev I., Kunitsyna E., Mikhailova M., ...Daha Fazla

Optoelectronics and Advanced Materials, Rapid Communications, cilt.12, ss.517-520, 2018 (SCI-Expanded) identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 12
  • Basım Tarihi: 2018
  • Dergi Adı: Optoelectronics and Advanced Materials, Rapid Communications
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.517-520
  • Anahtar Kelimeler: Capacitance and voltage characteristics, Dark current, Gamma irradiation, Photosensitivity
  • Bursa Uludağ Üniversitesi Adresli: Evet

Özet

© 2018, National Institute of Optoelectronics. All rights reserved.The electrical characteristics of a double type II heterojunction in the GaSb/GaInAsSb/GaSb system with stagger ed band alignment were studied. The dark current mechanisms in the heterostructures were investigated at several temperatures. The experimental results shows that, the low temperature region the tunneling mechanism(⋎ of the current flow dominates in both, forward and reverse biases. Have been investigated the radiation effect of60Co)-ray source with 6 MeV photon energy and 1.5x1011 gamma/cm2 fluency on the electrical and optical characteristics.