Electrical and photoelectrical properties of isotype N+-GaSb/n(0)-GaInAsSb type II heterojunctions

Afrailov M.

INFRARED PHYSICS & TECHNOLOGY, cilt.45, sa.3, ss.169-175, 2004 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 45 Sayı: 3
  • Basım Tarihi: 2004
  • Doi Numarası: 10.1016/j.infrared.2003.09.001
  • Dergi Adı: INFRARED PHYSICS & TECHNOLOGY
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.169-175
  • Anahtar Kelimeler: isotype structures, type II heterojunctions with staggered band alignment, photo-response, dark current
  • Bursa Uludağ Üniversitesi Adresli: Hayır

Özet

Dark current voltage characteristics, spectral response and energy diagrams have been studied for LPE grown isotype heterostructures lattice-matched to GaSb substrates. The dark current mechanisms in the isotype heterostructures were investigated at several temperatures. It is shown that a type II staggered heterojunction can behave as a Schottky diode and the dark current-voltage characteristics of this isotype heterostructures were rectifying over the whole temperature range 90-300 K. The photocurrent sign dependence on photon energy has been studied as a function of forward bias. (C) 2003 Elsevier B.V. All rights reserved.