A ZnS-Si hetero-junction photodiode for short wavelength photon detection


Tapan İ., Afrailov M.

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, sa.1-2, ss.92-96, 2003 (SCI-Expanded) identifier identifier identifier

Özet

In this work, we have developed a Zinc sulfide Silicon (ZnS-Si) hetero-junction photodiode structure that has very high quantum efficiency for photons of wavelength in the region from 340 to 800 nm. This structure is suitable for scintillating crystals used in particle physics experiments, emit light in the wavelength region of 400-550 nm. The signal generation process has been performed in a well-defined device geometry by a Monte Carlo simulation code written in Fortran. Based on this work, we offer a new photodiode structure for scintillation lights detection. (C) 2003 Elsevier B.V. All rights reserved.