Gallium antimonide - Based photodiodes and thermophotovoltaic devices

Afrailov M., Andreev I. A., Kunitsyna E. V., Mikhailova M. P., Yakovlev Y. P., Erturk K.

6th International Conference of the Balkan-Physical-Union, İstanbul, Türkiye, 22 - 26 Ağustos 2006, cilt.899, ss.447-448 identifier identifier

  • Yayın Türü: Bildiri / Tam Metin Bildiri
  • Cilt numarası: 899
  • Doi Numarası: 10.1063/1.2733229
  • Basıldığı Şehir: İstanbul
  • Basıldığı Ülke: Türkiye
  • Sayfa Sayıları: ss.447-448
  • Anahtar Kelimeler: GaSb, GaInAsSb, heterostructure, photodiode, TPV device, GA1-XINXASYSB1-Y
  • Bursa Uludağ Üniversitesi Adresli: Evet

Özet

This paper briefly presents some important aspects of the GaSb-based material growth, as well as the performance of photodiodes and TPV devices for the 0.9-2.55 mu m spectral range. A reproducible technique has been developed for the production of high-speed and high-efficiency GaSb/GaInAsSb/GaAlAsSb photodiodes. The detectivity of the photodiodes, estimated from the measured noise level and monochromatic current sensitivity, in the spectral peak reaches D*(lambda(max), 1000,1)=(0.8-1.0)x10(11) W(-1)xcmxHz(1/2) at room temperature. Recently, we have adapted the technology for creating GaInAsSb (0.52-0.53 eV band gap) TPV devices. Based on the our results we believe a 0.5 eV band gap GaSb-based TPV cell with an open-circuit voltage well over 300 mV at current 2-3 A is a realistic near-term goal.