Research Information System
Thesis Type: Postgraduate
Institution Of The Thesis: Bursa Uludağ University, FEN BİLİMLERİ ENSTİTÜSÜ, Turkey
Approval Date: 2019
Thesis Language: Turkish
Student: MURAT DURMUŞ
Supervisor: Umut Aydemir
Abstract:In this thesis, the Schottky diodes irradiated with 30 kGy, 100 kGy and non-irradiated Alq3 organic interfacial layer are fabricated. The electrical properties of produced diodes and the effect of irradiation on device performance are investigated. Schottky diodes with organic interfacial layer are extensively researched and used due to their low cost and fast frequency response. Particularly high switching speeds are an important advantage of these diodes. Therefore, the interest in Schottky diodes with organic interface layer has increased gradually. In this thesis, Silicon diodes with organic interfacial layer were modified by using Alq3 interfacial layer and device performance was analyzed. In addition, the interfacial layer sandwiched between metal/semiconductor interface was irradiated with Electron-Beam Accelerator and its effect on device properties was investigated. The aim of the study is to compare electrical parameters of Shottky diodes by using non-irradiated and irradiated organic interfacial layers and to improve the device performance. Thus, it's aimed to obtain production of electronic devices with higher performance. In this study, current-voltage (I-V) characteristics of unirradiated and irradiated Au / Alq3 / n-Si Schottky diodes with Alq3 interfacial layers irradiated with E-Beam doses of 30 kGy (low) and 100 kGy (high) were carried out between ±3 Volts at room temperature. The parameters of the diodes (Schottky barrier height and series resistance etc.) were calculated by using diffrent methods. It was determined by experimental methods that the performance of Au / Alq3 / n-Si Shottky diode device with 100 kGy of irradiated Alq3 interfacial layer was better than the performance of other Au / Alq3 / n-Si Shottky diode devices. It has been observed that the I-V, C-V and G/ω-V characteristics of Au / Alq3 / n-Si Schottky diode is highly influenced by irradiation and the device performance can be improved with the appropriate irradiation dose.