Gokcen, M. Et Al. 2011. Forward and reverse bias current-voltage characteristics of Au/n-Si Schottky barrier diodes with and without SnO2 insulator layer. PHYSICA B-CONDENSED MATTER , vol.406, no.21 , 4119-4123.

Gokcen, M., Altindal, S., Karaman, M., & AYDEMİR, U., (2011). Forward and reverse bias current-voltage characteristics of Au/n-Si Schottky barrier diodes with and without SnO2 insulator layer. PHYSICA B-CONDENSED MATTER , vol.406, no.21, 4119-4123.

Gokcen, M. Et Al. "Forward and reverse bias current-voltage characteristics of Au/n-Si Schottky barrier diodes with and without SnO2 insulator layer," PHYSICA B-CONDENSED MATTER , vol.406, no.21, 4119-4123, 2011

Gokcen, M. Et Al. "Forward and reverse bias current-voltage characteristics of Au/n-Si Schottky barrier diodes with and without SnO2 insulator layer." PHYSICA B-CONDENSED MATTER , vol.406, no.21, pp.4119-4123, 2011

Gokcen, M. Et Al. (2011) . "Forward and reverse bias current-voltage characteristics of Au/n-Si Schottky barrier diodes with and without SnO2 insulator layer." PHYSICA B-CONDENSED MATTER , vol.406, no.21, pp.4119-4123.

@article{article, author={M. Gokcen Et Al. }, title={Forward and reverse bias current-voltage characteristics of Au/n-Si Schottky barrier diodes with and without SnO2 insulator layer}, journal={PHYSICA B-CONDENSED MATTER}, year=2011, pages={4119-4123} }