KAHRAMAN, A. Et Al. 2020. The effect and nature of the radiation induced oxide-interface traps on the performance of the Yb2O3 MOS device. RADIATION PHYSICS AND CHEMISTRY , vol.177 .

KAHRAMAN, A., Gurer, U., & YILMAZ, E., (2020). The effect and nature of the radiation induced oxide-interface traps on the performance of the Yb2O3 MOS device. RADIATION PHYSICS AND CHEMISTRY , vol.177.

KAHRAMAN, AYŞEGÜL, Umutcan Gurer, And ERCAN YILMAZ. "The effect and nature of the radiation induced oxide-interface traps on the performance of the Yb2O3 MOS device," RADIATION PHYSICS AND CHEMISTRY , vol.177, 2020

KAHRAMAN, AYŞEGÜL Et Al. "The effect and nature of the radiation induced oxide-interface traps on the performance of the Yb2O3 MOS device." RADIATION PHYSICS AND CHEMISTRY , vol.177, 2020

KAHRAMAN, A. Gurer, U. And YILMAZ, E. (2020) . "The effect and nature of the radiation induced oxide-interface traps on the performance of the Yb2O3 MOS device." RADIATION PHYSICS AND CHEMISTRY , vol.177.

@article{article, author={AYŞEGÜL KAHRAMAN Et Al. }, title={The effect and nature of the radiation induced oxide-interface traps on the performance of the Yb2O3 MOS device}, journal={RADIATION PHYSICS AND CHEMISTRY}, year=2020}