KAHRAMAN, A. Et Al. 2015. Effects of post deposition annealing, interface states and series resistance on electrical characteristics of HfO2 MOS capacitors. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , vol.26, no.11 , 8277-8284.

KAHRAMAN, A., YILMAZ, E., Kaya, S., & AKTAĞ, A., (2015). Effects of post deposition annealing, interface states and series resistance on electrical characteristics of HfO2 MOS capacitors. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , vol.26, no.11, 8277-8284.

KAHRAMAN, AYŞEGÜL Et Al. "Effects of post deposition annealing, interface states and series resistance on electrical characteristics of HfO2 MOS capacitors," JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , vol.26, no.11, 8277-8284, 2015

KAHRAMAN, AYŞEGÜL Et Al. "Effects of post deposition annealing, interface states and series resistance on electrical characteristics of HfO2 MOS capacitors." JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , vol.26, no.11, pp.8277-8284, 2015

KAHRAMAN, A. Et Al. (2015) . "Effects of post deposition annealing, interface states and series resistance on electrical characteristics of HfO2 MOS capacitors." JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , vol.26, no.11, pp.8277-8284.

@article{article, author={AYŞEGÜL KAHRAMAN Et Al. }, title={Effects of post deposition annealing, interface states and series resistance on electrical characteristics of HfO2 MOS capacitors}, journal={JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS}, year=2015, pages={8277-8284} }