ANDREEV, I. Et Al. 1988. GAINASSB/GAALASSB-BASED AVALANCHE PHOTODIODE WITH SEPARATED ABSORPTION AND MULTIPLICATION AREAS. PISMA V ZHURNAL TEKHNICHESKOI FIZIKI , vol.14, no.11 , 986-991.

ANDREEV, I., AFRAILOV, M., BARANOV, A., MIRSAGATOV, M., MIKHAILOVA, M., & YAKOVLEV, Y., (1988). GAINASSB/GAALASSB-BASED AVALANCHE PHOTODIODE WITH SEPARATED ABSORPTION AND MULTIPLICATION AREAS. PISMA V ZHURNAL TEKHNICHESKOI FIZIKI , vol.14, no.11, 986-991.

ANDREEV, IA Et Al. "GAINASSB/GAALASSB-BASED AVALANCHE PHOTODIODE WITH SEPARATED ABSORPTION AND MULTIPLICATION AREAS," PISMA V ZHURNAL TEKHNICHESKOI FIZIKI , vol.14, no.11, 986-991, 1988

ANDREEV, IA Et Al. "GAINASSB/GAALASSB-BASED AVALANCHE PHOTODIODE WITH SEPARATED ABSORPTION AND MULTIPLICATION AREAS." PISMA V ZHURNAL TEKHNICHESKOI FIZIKI , vol.14, no.11, pp.986-991, 1988

ANDREEV, I. Et Al. (1988) . "GAINASSB/GAALASSB-BASED AVALANCHE PHOTODIODE WITH SEPARATED ABSORPTION AND MULTIPLICATION AREAS." PISMA V ZHURNAL TEKHNICHESKOI FIZIKI , vol.14, no.11, pp.986-991.

@article{article, author={IA ANDREEV Et Al. }, title={GAINASSB/GAALASSB-BASED AVALANCHE PHOTODIODE WITH SEPARATED ABSORPTION AND MULTIPLICATION AREAS}, journal={PISMA V ZHURNAL TEKHNICHESKOI FIZIKI}, year=1988, pages={986-991} }