Stoyanov, N. Et Al. 2001. Photodiodes for a 1.5-4.8 mu m spectral range based on type-II GaSb/InGaAsSb heterostructures. SEMICONDUCTORS , vol.35, no.4 , 453-458.

Stoyanov, N., Mikhailova, M., Andreichuk, O., Moiseev, K., Andreev, I., Afrailov, M., ... Yakovlev, Y.(2001). Photodiodes for a 1.5-4.8 mu m spectral range based on type-II GaSb/InGaAsSb heterostructures. SEMICONDUCTORS , vol.35, no.4, 453-458.

Stoyanov, ND Et Al. "Photodiodes for a 1.5-4.8 mu m spectral range based on type-II GaSb/InGaAsSb heterostructures," SEMICONDUCTORS , vol.35, no.4, 453-458, 2001

Stoyanov, ND Et Al. "Photodiodes for a 1.5-4.8 mu m spectral range based on type-II GaSb/InGaAsSb heterostructures." SEMICONDUCTORS , vol.35, no.4, pp.453-458, 2001

Stoyanov, N. Et Al. (2001) . "Photodiodes for a 1.5-4.8 mu m spectral range based on type-II GaSb/InGaAsSb heterostructures." SEMICONDUCTORS , vol.35, no.4, pp.453-458.

@article{article, author={ND Stoyanov Et Al. }, title={Photodiodes for a 1.5-4.8 mu m spectral range based on type-II GaSb/InGaAsSb heterostructures}, journal={SEMICONDUCTORS}, year=2001, pages={453-458} }