A. KAHRAMAN Et Al. , "Influence of frequency and gamma irradiation on the electrical characteristics of Er2O3, Gd2O3, Yb2O3, and HfO2 MOS-based devices," JOURNAL OF MATERIALS SCIENCE , vol.55, no.19, pp.7999-8040, 2020
KAHRAMAN, A. Et Al. 2020. Influence of frequency and gamma irradiation on the electrical characteristics of Er2O3, Gd2O3, Yb2O3, and HfO2 MOS-based devices. JOURNAL OF MATERIALS SCIENCE , vol.55, no.19 , 7999-8040.
KAHRAMAN, A., Deevi, S. C., & YILMAZ, E., (2020). Influence of frequency and gamma irradiation on the electrical characteristics of Er2O3, Gd2O3, Yb2O3, and HfO2 MOS-based devices. JOURNAL OF MATERIALS SCIENCE , vol.55, no.19, 7999-8040.
KAHRAMAN, AYŞEGÜL, Seetharama C. Deevi, And ERCAN YILMAZ. "Influence of frequency and gamma irradiation on the electrical characteristics of Er2O3, Gd2O3, Yb2O3, and HfO2 MOS-based devices," JOURNAL OF MATERIALS SCIENCE , vol.55, no.19, 7999-8040, 2020
KAHRAMAN, AYŞEGÜL Et Al. "Influence of frequency and gamma irradiation on the electrical characteristics of Er2O3, Gd2O3, Yb2O3, and HfO2 MOS-based devices." JOURNAL OF MATERIALS SCIENCE , vol.55, no.19, pp.7999-8040, 2020
KAHRAMAN, A. Deevi, S. C. And YILMAZ, E. (2020) . "Influence of frequency and gamma irradiation on the electrical characteristics of Er2O3, Gd2O3, Yb2O3, and HfO2 MOS-based devices." JOURNAL OF MATERIALS SCIENCE , vol.55, no.19, pp.7999-8040.
@article{article, author={AYŞEGÜL KAHRAMAN Et Al. }, title={Influence of frequency and gamma irradiation on the electrical characteristics of Er2O3, Gd2O3, Yb2O3, and HfO2 MOS-based devices}, journal={JOURNAL OF MATERIALS SCIENCE}, year=2020, pages={7999-8040} }