KAHRAMAN, A. And YILMAZ, E. 2021. Effect of oxide and interface traps on electrical characteristics of post-deposition annealed HfSiO4/n-Si structures. SEMICONDUCTOR SCIENCE AND TECHNOLOGY , vol.36, no.4 .

KAHRAMAN, A., & YILMAZ, E., (2021). Effect of oxide and interface traps on electrical characteristics of post-deposition annealed HfSiO4/n-Si structures. SEMICONDUCTOR SCIENCE AND TECHNOLOGY , vol.36, no.4.

KAHRAMAN, AYŞEGÜL, And ERCAN YILMAZ. "Effect of oxide and interface traps on electrical characteristics of post-deposition annealed HfSiO4/n-Si structures," SEMICONDUCTOR SCIENCE AND TECHNOLOGY , vol.36, no.4, 2021

KAHRAMAN, AYŞEGÜL And YILMAZ, ERCAN. "Effect of oxide and interface traps on electrical characteristics of post-deposition annealed HfSiO4/n-Si structures." SEMICONDUCTOR SCIENCE AND TECHNOLOGY , vol.36, no.4, 2021

KAHRAMAN, A. And YILMAZ, E. (2021) . "Effect of oxide and interface traps on electrical characteristics of post-deposition annealed HfSiO4/n-Si structures." SEMICONDUCTOR SCIENCE AND TECHNOLOGY , vol.36, no.4.

@article{article, author={AYŞEGÜL KAHRAMAN And author={ERCAN YILMAZ}, title={Effect of oxide and interface traps on electrical characteristics of post-deposition annealed HfSiO4/n-Si structures}, journal={SEMICONDUCTOR SCIENCE AND TECHNOLOGY}, year=2021}