AYDEMİR, U. Et Al. 2010. The C-V-f and G/w-V-f Characteristics of Au/SrTiO3/n-Si Schottky Barrier Diodes (SBDs) with Interfacial Layer. International Conferance ”Physics-2010” , (Baku, Azerbaijan), 223-224.

AYDEMİR, U., TAŞÇIOĞLU, İ., ASAR, T., Mamedova, V. J., & Mammadov, T., (2010). The C-V-f and G/w-V-f Characteristics of Au/SrTiO3/n-Si Schottky Barrier Diodes (SBDs) with Interfacial Layer . International Conferance ”Physics-2010” (pp.223-224). Baku, Azerbaijan

AYDEMİR, UMUT Et Al. "The C-V-f and G/w-V-f Characteristics of Au/SrTiO3/n-Si Schottky Barrier Diodes (SBDs) with Interfacial Layer," International Conferance ”Physics-2010”, Baku, Azerbaijan, 2010

AYDEMİR, UMUT Et Al. "The C-V-f and G/w-V-f Characteristics of Au/SrTiO3/n-Si Schottky Barrier Diodes (SBDs) with Interfacial Layer." International Conferance ”Physics-2010” , Baku, Azerbaijan, pp.223-224, 2010

AYDEMİR, U. Et Al. (2010) . "The C-V-f and G/w-V-f Characteristics of Au/SrTiO3/n-Si Schottky Barrier Diodes (SBDs) with Interfacial Layer." International Conferance ”Physics-2010” , Baku, Azerbaijan, pp.223-224.

@conferencepaper{conferencepaper, author={UMUT AYDEMİR Et Al. }, title={The C-V-f and G/w-V-f Characteristics of Au/SrTiO3/n-Si Schottky Barrier Diodes (SBDs) with Interfacial Layer}, congress name={International Conferance ”Physics-2010”}, city={Baku}, country={Azerbaijan}, year={2010}, pages={223-224} }