KAHRAMAN, A. Et Al. 2018. Impact of interfacial layer using ultra-thin SiO2 on electrical and structural characteristics of Gd2O3 MOS capacitor. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , vol.29, no.20 , 17473-17482.

KAHRAMAN, A., Gurer, U., LÖK, R., KAYA, Ş., & YILMAZ, E., (2018). Impact of interfacial layer using ultra-thin SiO2 on electrical and structural characteristics of Gd2O3 MOS capacitor. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , vol.29, no.20, 17473-17482.

KAHRAMAN, AYŞEGÜL Et Al. "Impact of interfacial layer using ultra-thin SiO2 on electrical and structural characteristics of Gd2O3 MOS capacitor," JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , vol.29, no.20, 17473-17482, 2018

KAHRAMAN, AYŞEGÜL Et Al. "Impact of interfacial layer using ultra-thin SiO2 on electrical and structural characteristics of Gd2O3 MOS capacitor." JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , vol.29, no.20, pp.17473-17482, 2018

KAHRAMAN, A. Et Al. (2018) . "Impact of interfacial layer using ultra-thin SiO2 on electrical and structural characteristics of Gd2O3 MOS capacitor." JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , vol.29, no.20, pp.17473-17482.

@article{article, author={AYŞEGÜL KAHRAMAN Et Al. }, title={Impact of interfacial layer using ultra-thin SiO2 on electrical and structural characteristics of Gd2O3 MOS capacitor}, journal={JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS}, year=2018, pages={17473-17482} }